جامعة بلاد الرافدين - Bilad Alrafidain University

	2024	3rd International Conference on Engineering and Science to Achieve the Sustainable Development Goals,
A design of plasmonic AND, OR, and XOR gates were discussed and simulated using Insulator Metal Insulator (IMI) structure. The Finite-Element-Method (FEM) with COMSOL software was suggested for implementing the logic gate structure. Square resonators with input, output, and control stripes were used to realize the constrictive and destructive interference when the transmission threshold (Tthreshold) is chosen to be 0.5 W. The gates footprint is 300 × 350 nm at 1550 nm resonant wavelength. The square resonator, one input one output system offers a high selectivity when the Quality factor (Q-factor) is 38.5 and the Full-Width to Half-Maximum (FWHM) is 33. Modulation-Depth (MD), Contrast-Ratio (CR), and Insertion-Loss (IL) suggested to evaluate, and study the three gates. For AND gate the CR, MD, and IL have 12.9, 97.8, and 2.4, then for OR gate the three parameters have 8.7, 94.9, and -1.7, respectively. Finally, for XOR gate the CR has 8.7, the IM has 86.7, and the IL has -1.7.

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